{"product_id":"9781402034749","title":"NATO Science Series II: Mathematics, Physics and Chemistry: Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004","description":"\u003ch1\u003eNATO Science Series II: Mathematics, Physics and Chemistry\u003c\/h1\u003e\u003ch2\u003eProceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004\u003c\/h2\u003e\u003cp\u003e\u003cstrong\u003eContributors:\u003c\/strong\u003e Nickel, Norbert H.; Terukov, Evgenii\u003c\/p\u003e\u003cp\u003eRecently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm \/Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.\u003c\/p\u003e\u003ch3\u003eBook Details\u003c\/h3\u003e\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePublisher:\u003c\/strong\u003e Springer\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePublication Date:\u003c\/strong\u003e 2005-08-16\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eFormat:\u003c\/strong\u003e Paperback\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eISBN-13:\u003c\/strong\u003e 9781402034749\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePages:\u003c\/strong\u003e 240\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"Springer","offers":[{"title":"Default Title","offer_id":45605136728204,"sku":"9781402034749","price":152.99,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/9545\/1788\/files\/9781402034749.jpg?v=1768929404","url":"https:\/\/lateknightbooks.com\/products\/9781402034749","provider":"Late Knight Books and Services, LLC","version":"1.0","type":"link"}