Synthesis Lectures on Emerging Engineering Technologies: Physics Based Perspectives and Attributes

Ashraf, Nabil Shovon

Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.

Details

Published by: Springer

Publication Date: 2025-03-27

Format: Hardcover

ISBN-13: 9783031842856

DOI: 10.1007/978-3-031-84286-3

Dimensions: 240cm x168cm

Pages: 129