Provides timely coverage of an important research area that is highly relevant to advanced detection and control technology

Projecting device performance beyond the scaling limits of Moore’s law requires technologies based on novel materials and device architecture. Due to its excellent electronic, thermal, and optical properties, graphene has emerged as a scalable, low-cost material with enormous integration possibilities for numerous optoelectronic applications. Graphene for Post-Moore Silicon Optoelectronics presents an up-to-date overview of the fundamentals, applications, challenges, and opportunities of integrating graphene and other 2D materials with silicon (Si) technologies.

With an emphasis on graphene-silicon (Gr/Si) integrated devices in optoelectronics, this valuable resource also addresses emerging applications such as optoelectronic synaptic devices, optical modulators, and infrared image sensors. The book opens with an introduction to graphene for silicon optoelectronics, followed by chapters describing the growth, transfer, and physics of graphene/silicon junctions. Subsequent chapters each focus on a particular Gr/Si application, including high-performance photodetectors, solar energy harvesting devices, and hybrid waveguide devices. The book concludes by offering perspectives on the future challenges and prospects of Gr/Si optoelectronics, including the emergence of wafer-scale systems and neuromorphic optoelectronics.

• Illustrates the benefits of graphene-based electronics and hybrid device architectures that incorporate existing Si technology
• Covers all essential aspects of Gr/Si devices, including material synthesis, device fabrication, system integration, and related physics
• Summarizes current progress and future challenges of wafer-scale 2D-Si integrated optoelectronic devices
• Explores a wide range of Gr/Si devices, such as synaptic phototransistors, hybrid waveguide modulators, and graphene thermopile image sensors

Graphene for Post-Moore Silicon Optoelectronics is essential reading for materials scientists, electronics engineers, and chemists in both academia and industry working with the next generation of Gr/Si devices.

Yang Xu is a full professor and Assistant Dean at the School of Micro-Nano Electronics, Zhejiang University, China. He is an IEEE NTC Distinguished Lecturer and Senior Member of the IEEE Electron Devices Society. His current research interests include emerging low-dimensional smart sensors, photodetectors, and actuators for internet-of-things and flexible electronics.

Khurram Shehzad served as a Research Associate Professor at the School of Micro-Nano Electronics, Zhejiang University, China.

Srikrishna Chanakya Bodepudi is a Distinguished Research Fellow at the School of Micro-Nano Electronics, Zhejiang University, China.

Ali Imran is perusing his research at School of Micro-Nano Electronics, Zhejiang University, China.

Bin Yu is a full professor at the School of Micro-Nano Electronics, Zhejiang University, China. His current research interests include nanoelectronics, sensors, and neuromorphic devices.