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Gas Source Molecular Beam Epitaxy

Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures

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Springer Series in Materials Science

Gas Source Molecular Beam Epitaxy

Growth and Properties of Phosphorus Containing III-V Heterostructures

Morton B. Panish | Henryk Temkin

Science / Physics / Optics & Light

Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.

Publication Date: 30 December 2011
Publisher: Springer Berlin Heidelberg
Imprint: Springer
ISBN-13: 9783642781292
Format: Paperback / softback
Page Count: 428

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