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Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
Published by: Springer
Publication Date: 2012-03-14
Format: Paperback
ISBN-13: 9789400730830
DOI: 10.1007/978-90-481-3280-5
Dimensions: 235cm x155cm
Pages: 127