Springer Theses

Zhu, Min

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Details

Published by: Springer

Publication Date: 2018-12-12

Format: Paperback

ISBN-13: 9789811351235

DOI: 10.1007/978-981-10-4382-6

Dimensions: 235cm x155cm

Pages: 124